Improvement of Negative Bias Stress Stability in Mg0.03Zn0.97O Thin-Film Transistors

A small amount of Mg is introduced into ZnO to form the ternary compound Mg 0.03 Zn 0.97 O (MZO), which serves as the channel layer of thin-film transistors (TFTs). The MZO TFT shows smaller subthreshold swing of 0.57 V/decade and much better negative bias stress (NBS) stability, which shifts only b...

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Bibliographic Details
Published in:IEEE electron device letters 2015-09, Vol.36 (9), p.914-916
Main Authors: Chieh-Jen Ku, Wen-Chiang Hong, Mohsin, Tanvir, Rui Li, Ziqing Duan, Yicheng Lu
Format: Article
Language:English
Subjects:
II-VI semiconductor materials
Mg doping
negative bias stress (NBS) stability
NIST
Oxide TFT
Stress
Testing
Thin film transistors
Threshold voltage
Zinc oxide
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Summary:A small amount of Mg is introduced into ZnO to form the ternary compound Mg 0.03 Zn 0.97 O (MZO), which serves as the channel layer of thin-film transistors (TFTs). The MZO TFT shows smaller subthreshold swing of 0.57 V/decade and much better negative bias stress (NBS) stability, which shifts only by -1.21 V in the threshold voltage over its ZnO TFT counterpart (subthreshold swing of 0.79 V/decade; -3.56 V shifts in the threshold voltage after NBS). The superior stability against NBS is mainly attributed to the reduction of donor-like defects associated with ionized oxygen vacancies in the MZO TFT channel.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2459600