Low-Temperature Ohmic Contact Formation in GaN High Electron Mobility Transistors Using Microwave Annealing

In this letter, a low-temperature microwave annealing (MWA) method is first reported for the formation of ohmic contact to AlGaN/GaN high electron mobility transistors (HEMTs). Compared with the traditional GaN devices annealed by rapid thermal annealing (RTA), MWA-HEMTs can achieve a low ohmic cont...

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Bibliographic Details
Published in:IEEE electron device letters 2015-09, Vol.36 (9), p.896-898
Main Authors: Lin-Qing Zhang, Jin-Shan Shi, Hong-Fan Huang, Xiao-Yong Liu, Sheng-Xun Zhao, Peng-Fei Wang, Zhang, David Wei
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Annealing
Gallium nitride
low temperature
microwave annealing (MWA)
Ohmic contact
Ohmic contacts
Surface morphology
Wide band gap semiconductors
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Summary:In this letter, a low-temperature microwave annealing (MWA) method is first reported for the formation of ohmic contact to AlGaN/GaN high electron mobility transistors (HEMTs). Compared with the traditional GaN devices annealed by rapid thermal annealing (RTA), MWA-HEMTs can achieve a low ohmic contact resistance with much smoother surface of ohmic contacts. The spike mechanism is observed in our ohmic contact annealed by microwave under a low-temperature condition. Besides, MWA-HEMTs have higher I ON /I OFF ratio and lower gate leakage current than the fabricated RTA-HEMTs in this letter.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2461545