Flexible Low-Voltage In-Zn-O Homojunction TFTs With Beeswax Gate Dielectric on Paper Substrates

Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium-zincoxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 μF/cm 2 is measured at 1 Hz in the beeswax film due to the electric-dou...

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Bibliographic Details
Published in:IEEE electron device letters 2016-03, Vol.37 (3), p.287-290
Main Authors: Jiang, Shuanghe, Feng, Ping, Yang, Yi, Du, Peifu, Shi, Yi, Wan, Qing
Format: Article
Language:English
Subjects:
Aging
Beeswax gate dielectrics
Capacitance
Dielectrics
Flexible thin-film transistors
Logic gates
Paper Electronics
Substrates
Thin film transistors
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Summary:Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium-zincoxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 μF/cm 2 is measured at 1 Hz in the beeswax film due to the electric-doublelayer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be 7.6 × 106, 86 mV/decade, and 14.6 cm 2 /Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2518666