3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

A critical issue for SiC trench gate metal-oxide- semiconductor field-effect transistors (UMOSFETs) is gate oxide shielding from the electric field at the trench bottom. In this letter, low ON-resistance with low gate electric field was achieved in a 3.3-kV-class UMOSFET with a unique hexagonal buri...

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Bibliographic Details
Published in:IEEE electron device letters 2016-03, Vol.37 (3), p.314-316
Main Authors: Harada, Shinsuke, Kobayashi, Yusuke, Ariyoshi, Keiko, Kojima, Takahito, Senzaki, Junji, Tanaka, Yasunori, Okumura, Hajime
Format: Article
Language:English
Subjects:
4H-SiC
Electric fields
Epitaxial growth
gate electric field
Logic gates
MeV-implantation
MOSFET
on-resistance
Resistance
Silicon carbide
UMOSFET
Yttrium
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Summary:A critical issue for SiC trench gate metal-oxide- semiconductor field-effect transistors (UMOSFETs) is gate oxide shielding from the electric field at the trench bottom. In this letter, low ON-resistance with low gate electric field was achieved in a 3.3-kV-class UMOSFET with a unique hexagonal buried p-base region formed by MeV ion implantation. The shielding effect was further enhanced by a self-aligned trench bottom shielding region. The specific ON-resistance, with and without the trench bottom shielding region, was 8.3 and 9.4 mΩcm 2 , respectively. The blocking voltage in each case was ~3800 V. The electric field in the gate oxide with the trench bottom shielding region was reduced to 2.5 MV/cm at 3300 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2520464