Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer...

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Bibliographic Details
Published in:IEEE electron device letters 2016-05, Vol.37 (5), p.621-624
Main Authors: Huarui Sun, Pomeroy, James W., Simon, Roland B., Francis, Daniel, Faili, Firooz, Twitchen, Daniel J., Kuball, Martin
Format: Article
Language:English
Subjects:
Conductivity
Diamonds
Gallium nitride
GaN-on-diamond
HEMT
reliability
temperature dependence
Temperature measurement
Thermal conductivity
Thermal resistance
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Summary:The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2537835