Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer...

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Published in:IEEE electron device letters 2016-05, Vol.37 (5), p.621-624
Main Authors: Huarui Sun, Pomeroy, James W., Simon, Roland B., Francis, Daniel, Faili, Firooz, Twitchen, Daniel J., Kuball, Martin
Format: Article
Language:English
Subjects:
Conductivity
Diamonds
Gallium nitride
GaN-on-diamond
HEMT
reliability
temperature dependence
Temperature measurement
Thermal conductivity
Thermal resistance
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cited_by cdi_FETCH-LOGICAL-c380t-dd494ffa6f58a24f69bbc559c2673c491e6b13803404e9b9b98ad922515fc5ac3
cites cdi_FETCH-LOGICAL-c380t-dd494ffa6f58a24f69bbc559c2673c491e6b13803404e9b9b98ad922515fc5ac3
container_end_page 624
container_issue 5
container_start_page 621
container_title IEEE electron device letters
container_volume 37
creator Huarui Sun
Pomeroy, James W.
Simon, Roland B.
Francis, Daniel
Faili, Firooz
Twitchen, Daniel J.
Kuball, Martin
description The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.
doi_str_mv 10.1109/LED.2016.2537835
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2016_2537835</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7429696</ieee_id><sourcerecordid>4047110861</sourcerecordid><originalsourceid>FETCH-LOGICAL-c380t-dd494ffa6f58a24f69bbc559c2673c491e6b13803404e9b9b98ad922515fc5ac3</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKt7wc2A69S8M1lKn0JVkBGXIZO5wSmdh8l04b93Sovcxdl851z4ELqnZEYpMU_b5WLGCFUzJrnOubxAEypljolU_BJNiBYUc0rUNbpJaUcIFUKLCVoV0PQQ3XCIgBfQQ1tBO2TFN8TG7bMPSHUaXOsh60K2dm-4a_Gidk3XVtlm-VpkXy5ATLfoKrh9grtzTtHnalnMN3j7vn6ZP2-x5zkZcFUJI0JwKsjcMRGUKUsvpfFMae6FoaBKOpJcEAGmHC93lWFMUhm8dJ5P0eNpt4_dzwHSYHfdIbbjS0t1rmnOqFIjRU6Uj11KEYLtY924-GspsUdbdrRlj7bs2dZYeThVagD4x7VgRhnF_wClp2Qz</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1787182166</pqid></control><display><type>article</type><title>Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Huarui Sun ; Pomeroy, James W. ; Simon, Roland B. ; Francis, Daniel ; Faili, Firooz ; Twitchen, Daniel J. ; Kuball, Martin</creator><creatorcontrib>Huarui Sun ; Pomeroy, James W. ; Simon, Roland B. ; Francis, Daniel ; Faili, Firooz ; Twitchen, Daniel J. ; Kuball, Martin</creatorcontrib><description>The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2016.2537835</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Conductivity ; Diamonds ; Gallium nitride ; GaN-on-diamond ; HEMT ; reliability ; temperature dependence ; Temperature measurement ; Thermal conductivity ; Thermal resistance</subject><ispartof>IEEE electron device letters, 2016-05, Vol.37 (5), p.621-624</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-dd494ffa6f58a24f69bbc559c2673c491e6b13803404e9b9b98ad922515fc5ac3</citedby><cites>FETCH-LOGICAL-c380t-dd494ffa6f58a24f69bbc559c2673c491e6b13803404e9b9b98ad922515fc5ac3</cites><orcidid>0000-0003-1429-0611</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7429696$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Huarui Sun</creatorcontrib><creatorcontrib>Pomeroy, James W.</creatorcontrib><creatorcontrib>Simon, Roland B.</creatorcontrib><creatorcontrib>Francis, Daniel</creatorcontrib><creatorcontrib>Faili, Firooz</creatorcontrib><creatorcontrib>Twitchen, Daniel J.</creatorcontrib><creatorcontrib>Kuball, Martin</creatorcontrib><title>Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.</description><subject>Conductivity</subject><subject>Diamonds</subject><subject>Gallium nitride</subject><subject>GaN-on-diamond</subject><subject>HEMT</subject><subject>reliability</subject><subject>temperature dependence</subject><subject>Temperature measurement</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEUhYMoWKt7wc2A69S8M1lKn0JVkBGXIZO5wSmdh8l04b93Sovcxdl851z4ELqnZEYpMU_b5WLGCFUzJrnOubxAEypljolU_BJNiBYUc0rUNbpJaUcIFUKLCVoV0PQQ3XCIgBfQQ1tBO2TFN8TG7bMPSHUaXOsh60K2dm-4a_Gidk3XVtlm-VpkXy5ATLfoKrh9grtzTtHnalnMN3j7vn6ZP2-x5zkZcFUJI0JwKsjcMRGUKUsvpfFMae6FoaBKOpJcEAGmHC93lWFMUhm8dJ5P0eNpt4_dzwHSYHfdIbbjS0t1rmnOqFIjRU6Uj11KEYLtY924-GspsUdbdrRlj7bs2dZYeThVagD4x7VgRhnF_wClp2Qz</recordid><startdate>201605</startdate><enddate>201605</enddate><creator>Huarui Sun</creator><creator>Pomeroy, James W.</creator><creator>Simon, Roland B.</creator><creator>Francis, Daniel</creator><creator>Faili, Firooz</creator><creator>Twitchen, Daniel J.</creator><creator>Kuball, Martin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1429-0611</orcidid></search><sort><creationdate>201605</creationdate><title>Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers</title><author>Huarui Sun ; Pomeroy, James W. ; Simon, Roland B. ; Francis, Daniel ; Faili, Firooz ; Twitchen, Daniel J. ; Kuball, Martin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c380t-dd494ffa6f58a24f69bbc559c2673c491e6b13803404e9b9b98ad922515fc5ac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Conductivity</topic><topic>Diamonds</topic><topic>Gallium nitride</topic><topic>GaN-on-diamond</topic><topic>HEMT</topic><topic>reliability</topic><topic>temperature dependence</topic><topic>Temperature measurement</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huarui Sun</creatorcontrib><creatorcontrib>Pomeroy, James W.</creatorcontrib><creatorcontrib>Simon, Roland B.</creatorcontrib><creatorcontrib>Francis, Daniel</creatorcontrib><creatorcontrib>Faili, Firooz</creatorcontrib><creatorcontrib>Twitchen, Daniel J.</creatorcontrib><creatorcontrib>Kuball, Martin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huarui Sun</au><au>Pomeroy, James W.</au><au>Simon, Roland B.</au><au>Francis, Daniel</au><au>Faili, Firooz</au><au>Twitchen, Daniel J.</au><au>Kuball, Martin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2016-05</date><risdate>2016</risdate><volume>37</volume><issue>5</issue><spage>621</spage><epage>624</epage><pages>621-624</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2016.2537835</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-1429-0611</orcidid><oa>free_for_read</oa></addata></record>
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source IEEE Electronic Library (IEL) Journals
subjects Conductivity
Diamonds
Gallium nitride
GaN-on-diamond
HEMT
reliability
temperature dependence
Temperature measurement
Thermal conductivity
Thermal resistance
title Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T17%3A43%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature-Dependent%20Thermal%20Resistance%20of%20GaN-on-Diamond%20HEMT%20Wafers&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Huarui%20Sun&rft.date=2016-05&rft.volume=37&rft.issue=5&rft.spage=621&rft.epage=624&rft.pages=621-624&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2016.2537835&rft_dat=%3Cproquest_cross%3E4047110861%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c380t-dd494ffa6f58a24f69bbc559c2673c491e6b13803404e9b9b98ad922515fc5ac3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1787182166&rft_id=info:pmid/&rft_ieee_id=7429696&rfr_iscdi=true