First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 × 50 × 0.1 μm 2 flex...

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Bibliographic Details
Published in:IEEE electron device letters 2016-05, Vol.37 (5), p.553-555
Main Authors: Mhedhbi, S., Lesecq, M., Altuntas, P., Defrance, N., Okada, E., Cordier, Y., Damilano, B., Tabares-Jimenez, G., Ebongue, A., Hoel, V.
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Engineering Sciences
Flexible
Gain
HEMTs
High Electron Mobility Transistor (HEMT)
millimeter-wave power density
Performance evaluation
Silicon
Substrates
Wide band gap semiconductors
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Summary:This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 × 50 × 0.1 μm 2 flexible device. At V DS = 5 V, a continuous-wave saturation output power density of 0.42 W/mm is achieved at 10 GHz, and associated with a maximum power-added efficiency of 29.8% and a linear power gain of 15.8 dB. The device exhibits an intrinsic current gain cutoff frequency F T of 38 GHz and a maximum oscillation frequency F MAX of 75 GHz. This result demonstrates the capability of flexible GaN-based HEMT for the development of applications requiring mechanical flexibility, high frequency operation, as well as high power performance.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2542921