Ultrasensitive Detection of Phosphate Using Ion-Imprinted Polymer Functionalized AlInN/GaN High Electron Mobility Transistors

In this letter, a first study on phosphate detection based on AlInN/GaN high electron mobility transistors (HEMTs) is presented. The ungated regions of GaN HEMT-based sensors were functionalized with the phosphate ion-imprinted polymer and their sensing behaviors were analyzed by detecting different...

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Bibliographic Details
Published in:IEEE electron device letters 2016-07, Vol.37 (7), p.913-915
Main Authors: Jia, X. L., Huang, X. Y., Tang, Y., Yang, L. H., Chen, D. J., Lu, H., Zhang, R., Zheng, Y. D.
Format: Article
Language:English
Subjects:
AlInN/GaN
Aluminum gallium nitride
HEMTs
ion-imprinted polymer
Ions
MODFETs
phosphate anion detection
Sensitivity
Sensors
thinner barrier
Wide band gap semiconductors
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Summary:In this letter, a first study on phosphate detection based on AlInN/GaN high electron mobility transistors (HEMTs) is presented. The ungated regions of GaN HEMT-based sensors were functionalized with the phosphate ion-imprinted polymer and their sensing behaviors were analyzed by detecting different concentrations of phosphate solutions. The results show that the AlInN/GaN sensor exhibits an ultrasensitive response and a specific recognition to phosphate anion and reaches a detection limit below 0.02 mg/L level, which is much lower than the limited indicator level of 0.1 mg/L for the plankton growth, while the AlInN/GaN sensor shows a higher sensitivity to phosphate anion when compared with the AlGaN/GaN sensor. This ultra-high sensitivity is attributed to the use of thinner barrier layer in the AlInN/GaN heterostructure, which makes 2-D electron gas channel more sensitive to the change of surface charge.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2567447