Complementary Skyrmion Racetrack Memory With Voltage Manipulation

Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, i...

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Bibliographic Details
Published in:IEEE electron device letters 2016-07, Vol.37 (7), p.924-927
Main Authors: Kang, Wang, Zheng, Chentian, Huang, Yangqi, Zhang, Xichao, Zhou, Yan, Lv, Weifeng, Zhao, Weisheng
Format: Article
Language:English
Subjects:
Current density
domain wall
Energy barrier
Magnetic heads
Magnetic skyrmion
Micromagnetics
racetrack memory
Stability analysis
Synchronization
Voltage control
voltage manipulation
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Summary:Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2574916