Operation of SiGe HBTs Down to 70 mK

We present the first measurement results of a highly scaled, 90-nm silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures as low as 70 mK. The SiGe HBT exhibits a transistor-like behavior down to 70 mK, but below 40 K, the transconductance suggests the pre...

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Bibliographic Details
Published in:IEEE electron device letters 2017-01, Vol.38 (1), p.12-15
Main Authors: Hanbin Ying, Wier, Brian R., Dark, Jason, Lourenco, Nelson E., Luwei Ge, Omprakash, Anup P., Mourigal, Martin, Davidovic, Dragomir, Cressler, John D.
Format: Article
Language:English
Subjects:
Cryogenic
Cryogenics
Current measurement
Engineering
Heterojunction bipolar transistors
magnetic field
Magnetic tunneling
quantum computing
readout
Semiconductor device measurement
SiGe
Silicon germanium
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Summary:We present the first measurement results of a highly scaled, 90-nm silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures as low as 70 mK. The SiGe HBT exhibits a transistor-like behavior down to 70 mK, but below 40 K, the transconductance suggests the presence of nonequilibrium transport mechanisms. Despite the non-ideal base current at cryogenic temperatures, a dc current gain (β) > 1 is achieved for I C > 1 nA, suggesting that ultralow-power low-noise amplifiers should be viable. Exposure of the SiGe HBT to strong magnetic fields (±14 T) is also presented to help understand the nature of the non-ideal
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2633465