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P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit
Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short...
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| Published in: | IEEE electron device letters 2017-04, Vol.38 (4), p.505-508 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c263t-39a97558a41b11f0014780be6e754b40e01870da4ac343762eb0b54ae2d08c173 |
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| cites | cdi_FETCH-LOGICAL-c263t-39a97558a41b11f0014780be6e754b40e01870da4ac343762eb0b54ae2d08c173 |
| container_end_page | 508 |
| container_issue | 4 |
| container_start_page | 505 |
| container_title | IEEE electron device letters |
| container_volume | 38 |
| creator | Fernandez, M. Perpina, X. Roig, J. Vellvehi, M. Bauwens, F. Jorda, X. Tack, M. |
| description | Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). A strong drain current reduction (>70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs. |
| doi_str_mv | 10.1109/LED.2017.2665163 |
| format | article |
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In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). A strong drain current reduction (>70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2017.2665163</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium nitride ; GaN HEMTs ; HEMTs ; Logic gates ; MODFETs ; p-GaN ; reliability ; Semiconductor device measurement ; short-circuit ; Temperature measurement ; Voltage measurement</subject><ispartof>IEEE electron device letters, 2017-04, Vol.38 (4), p.505-508</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-39a97558a41b11f0014780be6e754b40e01870da4ac343762eb0b54ae2d08c173</citedby><cites>FETCH-LOGICAL-c263t-39a97558a41b11f0014780be6e754b40e01870da4ac343762eb0b54ae2d08c173</cites><orcidid>0000-0001-5946-5580</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7845577$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Fernandez, M.</creatorcontrib><creatorcontrib>Perpina, X.</creatorcontrib><creatorcontrib>Roig, J.</creatorcontrib><creatorcontrib>Vellvehi, M.</creatorcontrib><creatorcontrib>Bauwens, F.</creatorcontrib><creatorcontrib>Jorda, X.</creatorcontrib><creatorcontrib>Tack, M.</creatorcontrib><title>P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). A strong drain current reduction (>70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs.</description><subject>Gallium nitride</subject><subject>GaN HEMTs</subject><subject>HEMTs</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>p-GaN</subject><subject>reliability</subject><subject>Semiconductor device measurement</subject><subject>short-circuit</subject><subject>Temperature measurement</subject><subject>Voltage measurement</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kMtKw0AUhgdRMFb3gpt5gYnnZG7pSkoaWyFewHYdJskJRmoqM-mib29Ci6t_89_4GLtHiBFh_ljkyzgBtHFijEYjL1iEWqcCtJGXLAKrUEgEc81uQvgGQKWsitjTh1i5N77OXzeBL73reu76hq_cQDw7eE_9wBe92x1DF_i2b8jzz6-9H0TW-frQDbfsqnW7QHdnnbHtc77J1qJ4X71ki0LUiZGDkHM3t-Mdp7BCbKd5m0JFhqxWlQICTC00TrlaKmlNQhVUWjlKGkhrtHLG4NRb-30Intry13c_zh9LhHICUI4AyglAeQYwRh5OkY6I_u02VVpbK_8AGMRUJA</recordid><startdate>201704</startdate><enddate>201704</enddate><creator>Fernandez, M.</creator><creator>Perpina, X.</creator><creator>Roig, J.</creator><creator>Vellvehi, M.</creator><creator>Bauwens, F.</creator><creator>Jorda, X.</creator><creator>Tack, M.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-5946-5580</orcidid></search><sort><creationdate>201704</creationdate><title>P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit</title><author>Fernandez, M. ; Perpina, X. ; Roig, J. ; Vellvehi, M. ; Bauwens, F. ; Jorda, X. ; Tack, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-39a97558a41b11f0014780be6e754b40e01870da4ac343762eb0b54ae2d08c173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Gallium nitride</topic><topic>GaN HEMTs</topic><topic>HEMTs</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>p-GaN</topic><topic>reliability</topic><topic>Semiconductor device measurement</topic><topic>short-circuit</topic><topic>Temperature measurement</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fernandez, M.</creatorcontrib><creatorcontrib>Perpina, X.</creatorcontrib><creatorcontrib>Roig, J.</creatorcontrib><creatorcontrib>Vellvehi, M.</creatorcontrib><creatorcontrib>Bauwens, F.</creatorcontrib><creatorcontrib>Jorda, X.</creatorcontrib><creatorcontrib>Tack, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEL</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fernandez, M.</au><au>Perpina, X.</au><au>Roig, J.</au><au>Vellvehi, M.</au><au>Bauwens, F.</au><au>Jorda, X.</au><au>Tack, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2017-04</date><risdate>2017</risdate><volume>38</volume><issue>4</issue><spage>505</spage><epage>508</epage><pages>505-508</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). A strong drain current reduction (>70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs.</abstract><pub>IEEE</pub><doi>10.1109/LED.2017.2665163</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-5946-5580</orcidid></addata></record> |
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| ispartof | IEEE electron device letters, 2017-04, Vol.38 (4), p.505-508 |
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| language | eng |
| recordid | cdi_crossref_primary_10_1109_LED_2017_2665163 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Gallium nitride GaN HEMTs HEMTs Logic gates MODFETs p-GaN reliability Semiconductor device measurement short-circuit Temperature measurement Voltage measurement |
| title | P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit |
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