Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays

This letter investigates the major differences between planar (2-D) and vertical-channel (3-D) NAND Flash memory arrays in terms of their temperature dependences. Attention is focused on three relevant parameters for memory array operation, namely, cell threshold-voltage, string saturation current,...

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Bibliographic Details
Published in:IEEE electron device letters 2017-04, Vol.38 (4), p.461-464
Main Authors: Resnati, Davide, Goda, Akira, Nicosia, Gianluca, Miccoli, Carmine, Spinelli, Alessandro S., Compagnoni, Christian Monzio
Format: Article
Language:English
Subjects:
Flash memories
Grain boundaries
semiconductor device modeling
semiconductor device reliability
Silicon
Temperature dependence
Temperature distribution
temperature effects
Temperature measurement
Temperature sensors
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Summary:This letter investigates the major differences between planar (2-D) and vertical-channel (3-D) NAND Flash memory arrays in terms of their temperature dependences. Attention is focused on three relevant parameters for memory array operation, namely, cell threshold-voltage, string saturation current, and width of the random telegraph noise distribution. Results highlight that the transition from 2-D to 3-D arrays introduced non-negligible changes in the temperature behavior of these parameters, whose origin is traced back to the different channel material of the technologies, i.e., monocrystalline versus polycrystalline silicon.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2675160