Ga 2 O 3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

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Bibliographic Details
Published in:IEEE electron device letters 2017-04, Vol.38 (4), p.513-516
Main Authors: Zeng, Ke, Wallace, Joshua S., Heimburger, Christopher, Sasaki, Kohei, Kuramata, Akito, Masui, Takekazu, Gardella, Joseph A., Singisetti, Uttam
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2675544