Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation

In this letter, the electrical properties of local oxidation of silicon (LOCOS) field oxide formed on 4H-SiC are reported. Moreover, unlike the conventional Si LOCOS process, a simpler method based on Ar preamorphization implantation is proposed. In addition to direct characterization of the field o...

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Bibliographic Details
Published in:IEEE electron device letters 2017-06, Vol.38 (6), p.798-801
Main Authors: Tseng, Yuan-Hung, Lin, Chung-Yu, Tsui, Bing-Yue
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Dielectric breakdown
Electric breakdown
Electric fields
Electrical properties
high temperature
Ion implantation
isolation technology
local oxidation of silicon (LOCOS)
Logic gates
MOS capacitors
Oxidation
Silicon
Silicon carbide
Very large scale integration
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Summary:In this letter, the electrical properties of local oxidation of silicon (LOCOS) field oxide formed on 4H-SiC are reported. Moreover, unlike the conventional Si LOCOS process, a simpler method based on Ar preamorphization implantation is proposed. In addition to direct characterization of the field oxide, device properties achieved using LOCOS isolation are compared with those achieved using the conventional chemical vapor deposition oxide isolation to clarify the impact of isolation technology. The results of this letter would be insightful for silicon-carbide-based very-large-scale integration technology.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2698018