Highly Scaled Ruthenium Interconnects

Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm 2 through subtractive patterning by using a metal-spacer patterning technique. The wires...

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Bibliographic Details
Published in:IEEE electron device letters 2017-07, Vol.38 (7), p.949-951
Main Authors: Dutta, Shibesh, Kundu, Shreya, Gupta, Anshul, Jamieson, Geraldine, Gomez Granados, Juan Fernando, Bommels, Jurgen, Wilson, Christopher J., Tokei, Zsolt, Adelmann, Christoph
Format: Article
Language:English
Subjects:
Conductivity
interconnects
Metals
Nanowires
Resistance
Ruthenium
Temperature measurement
thin films
Wires
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Summary:Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm 2 through subtractive patterning by using a metal-spacer patterning technique. The wires were characterized by physical as well as electrical measurements and demonstrate low resistivity, between 20 and 35 μΩcm for cross-sectional areas between 175 and 33 nm 2 .
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2709248