Highly Scaled Ruthenium Interconnects

Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm 2 through subtractive patterning by using a metal-spacer patterning technique. The wires...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2017-07, Vol.38 (7), p.949-951
Main Authors: Dutta, Shibesh, Kundu, Shreya, Gupta, Anshul, Jamieson, Geraldine, Gomez Granados, Juan Fernando, Bommels, Jurgen, Wilson, Christopher J., Tokei, Zsolt, Adelmann, Christoph
Format: Article
Language:English
Subjects:
Conductivity
interconnects
Metals
Nanowires
Resistance
Ruthenium
Temperature measurement
thin films
Wires
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c263t-b9613d63fc651550fbebd5da7fe0de493e586fb9c228626854686c7cd008681e3
cites cdi_FETCH-LOGICAL-c263t-b9613d63fc651550fbebd5da7fe0de493e586fb9c228626854686c7cd008681e3
container_end_page 951
container_issue 7
container_start_page 949
container_title IEEE electron device letters
container_volume 38
creator Dutta, Shibesh
Kundu, Shreya
Gupta, Anshul
Jamieson, Geraldine
Gomez Granados, Juan Fernando
Bommels, Jurgen
Wilson, Christopher J.
Tokei, Zsolt
Adelmann, Christoph
description Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm 2 through subtractive patterning by using a metal-spacer patterning technique. The wires were characterized by physical as well as electrical measurements and demonstrate low resistivity, between 20 and 35 μΩcm for cross-sectional areas between 175 and 33 nm 2 .
doi_str_mv 10.1109/LED.2017.2709248
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2017_2709248</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7934397</ieee_id><sourcerecordid>10_1109_LED_2017_2709248</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-b9613d63fc651550fbebd5da7fe0de493e586fb9c228626854686c7cd008681e3</originalsourceid><addsrcrecordid>eNo9j0tLw0AUhQdRMFb3gptsXCbeec8spba2EBB8rIdk5o6NpKlk0kX_vSktrs7mfOfwEXJPoaQU7FO1eCkZUF0yDZYJc0EyKqUpQCp-STLQghacgromNyn9AFAhtMjI46r93nSH_MPXHYb8fT9usG_323zdjzj4Xd-jH9MtuYp1l_DunDPytVx8zldF9fa6nj9XhWeKj0VjFeVB8eiVnM4hNtgEGWodEQIKy1EaFRvrGTOKKSOFMsprHwCMMhT5jMBp1w-7lAaM7ndot_VwcBTcUdNNmu6o6c6aE_JwQlpE_K9rywW3mv8BIoFNHw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Highly Scaled Ruthenium Interconnects</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Dutta, Shibesh ; Kundu, Shreya ; Gupta, Anshul ; Jamieson, Geraldine ; Gomez Granados, Juan Fernando ; Bommels, Jurgen ; Wilson, Christopher J. ; Tokei, Zsolt ; Adelmann, Christoph</creator><creatorcontrib>Dutta, Shibesh ; Kundu, Shreya ; Gupta, Anshul ; Jamieson, Geraldine ; Gomez Granados, Juan Fernando ; Bommels, Jurgen ; Wilson, Christopher J. ; Tokei, Zsolt ; Adelmann, Christoph</creatorcontrib><description>Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm 2 through subtractive patterning by using a metal-spacer patterning technique. The wires were characterized by physical as well as electrical measurements and demonstrate low resistivity, between 20 and 35 μΩcm for cross-sectional areas between 175 and 33 nm 2 .</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2017.2709248</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Conductivity ; interconnects ; Metals ; Nanowires ; Resistance ; Ruthenium ; Temperature measurement ; thin films ; Wires</subject><ispartof>IEEE electron device letters, 2017-07, Vol.38 (7), p.949-951</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-b9613d63fc651550fbebd5da7fe0de493e586fb9c228626854686c7cd008681e3</citedby><cites>FETCH-LOGICAL-c263t-b9613d63fc651550fbebd5da7fe0de493e586fb9c228626854686c7cd008681e3</cites><orcidid>0000-0002-3208-1277</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7934397$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Dutta, Shibesh</creatorcontrib><creatorcontrib>Kundu, Shreya</creatorcontrib><creatorcontrib>Gupta, Anshul</creatorcontrib><creatorcontrib>Jamieson, Geraldine</creatorcontrib><creatorcontrib>Gomez Granados, Juan Fernando</creatorcontrib><creatorcontrib>Bommels, Jurgen</creatorcontrib><creatorcontrib>Wilson, Christopher J.</creatorcontrib><creatorcontrib>Tokei, Zsolt</creatorcontrib><creatorcontrib>Adelmann, Christoph</creatorcontrib><title>Highly Scaled Ruthenium Interconnects</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm 2 through subtractive patterning by using a metal-spacer patterning technique. The wires were characterized by physical as well as electrical measurements and demonstrate low resistivity, between 20 and 35 μΩcm for cross-sectional areas between 175 and 33 nm 2 .</description><subject>Conductivity</subject><subject>interconnects</subject><subject>Metals</subject><subject>Nanowires</subject><subject>Resistance</subject><subject>Ruthenium</subject><subject>Temperature measurement</subject><subject>thin films</subject><subject>Wires</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9j0tLw0AUhQdRMFb3gptsXCbeec8spba2EBB8rIdk5o6NpKlk0kX_vSktrs7mfOfwEXJPoaQU7FO1eCkZUF0yDZYJc0EyKqUpQCp-STLQghacgromNyn9AFAhtMjI46r93nSH_MPXHYb8fT9usG_323zdjzj4Xd-jH9MtuYp1l_DunDPytVx8zldF9fa6nj9XhWeKj0VjFeVB8eiVnM4hNtgEGWodEQIKy1EaFRvrGTOKKSOFMsprHwCMMhT5jMBp1w-7lAaM7ndot_VwcBTcUdNNmu6o6c6aE_JwQlpE_K9rywW3mv8BIoFNHw</recordid><startdate>201707</startdate><enddate>201707</enddate><creator>Dutta, Shibesh</creator><creator>Kundu, Shreya</creator><creator>Gupta, Anshul</creator><creator>Jamieson, Geraldine</creator><creator>Gomez Granados, Juan Fernando</creator><creator>Bommels, Jurgen</creator><creator>Wilson, Christopher J.</creator><creator>Tokei, Zsolt</creator><creator>Adelmann, Christoph</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3208-1277</orcidid></search><sort><creationdate>201707</creationdate><title>Highly Scaled Ruthenium Interconnects</title><author>Dutta, Shibesh ; Kundu, Shreya ; Gupta, Anshul ; Jamieson, Geraldine ; Gomez Granados, Juan Fernando ; Bommels, Jurgen ; Wilson, Christopher J. ; Tokei, Zsolt ; Adelmann, Christoph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-b9613d63fc651550fbebd5da7fe0de493e586fb9c228626854686c7cd008681e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Conductivity</topic><topic>interconnects</topic><topic>Metals</topic><topic>Nanowires</topic><topic>Resistance</topic><topic>Ruthenium</topic><topic>Temperature measurement</topic><topic>thin films</topic><topic>Wires</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dutta, Shibesh</creatorcontrib><creatorcontrib>Kundu, Shreya</creatorcontrib><creatorcontrib>Gupta, Anshul</creatorcontrib><creatorcontrib>Jamieson, Geraldine</creatorcontrib><creatorcontrib>Gomez Granados, Juan Fernando</creatorcontrib><creatorcontrib>Bommels, Jurgen</creatorcontrib><creatorcontrib>Wilson, Christopher J.</creatorcontrib><creatorcontrib>Tokei, Zsolt</creatorcontrib><creatorcontrib>Adelmann, Christoph</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dutta, Shibesh</au><au>Kundu, Shreya</au><au>Gupta, Anshul</au><au>Jamieson, Geraldine</au><au>Gomez Granados, Juan Fernando</au><au>Bommels, Jurgen</au><au>Wilson, Christopher J.</au><au>Tokei, Zsolt</au><au>Adelmann, Christoph</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly Scaled Ruthenium Interconnects</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2017-07</date><risdate>2017</risdate><volume>38</volume><issue>7</issue><spage>949</spage><epage>951</epage><pages>949-951</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires down to cross-sectional areas of 33 nm 2 through subtractive patterning by using a metal-spacer patterning technique. The wires were characterized by physical as well as electrical measurements and demonstrate low resistivity, between 20 and 35 μΩcm for cross-sectional areas between 175 and 33 nm 2 .</abstract><pub>IEEE</pub><doi>10.1109/LED.2017.2709248</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0002-3208-1277</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2017-07, Vol.38 (7), p.949-951
issn 0741-3106
1558-0563
language eng
recordid cdi_crossref_primary_10_1109_LED_2017_2709248
source IEEE Electronic Library (IEL) Journals
subjects Conductivity
interconnects
Metals
Nanowires
Resistance
Ruthenium
Temperature measurement
thin films
Wires
title Highly Scaled Ruthenium Interconnects
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T12%3A17%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Highly%20Scaled%20Ruthenium%20Interconnects&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Dutta,%20Shibesh&rft.date=2017-07&rft.volume=38&rft.issue=7&rft.spage=949&rft.epage=951&rft.pages=949-951&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2017.2709248&rft_dat=%3Ccrossref_ieee_%3E10_1109_LED_2017_2709248%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c263t-b9613d63fc651550fbebd5da7fe0de493e586fb9c228626854686c7cd008681e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7934397&rfr_iscdi=true