Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf 0.8 Zr 0.2 O 2 , High Endurance and Breakdown Recovery

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Bibliographic Details
Published in:IEEE electron device letters 2017-10, Vol.38 (10), p.1379-1382
Main Authors: Chatterjee, Korok, Kim, Sangwan, Karbasian, Golnaz, Tan, Ava J., Yadav, Ajay K., Khan, Asif I., Hu, Chenming, Salahuddin, Sayeef
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2748992