Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO 2 / Al 2 O 3 Gate Stack

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Bibliographic Details
Published in:IEEE electron device letters 2018-04, Vol.39 (4), p.564-567
Main Authors: Arith, F., Urresti, J., Vasilevskiy, K., Olsen, S., Wright, N., O'Neill, A.
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2807620