Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory

This letter introduces a method of using bipolarity bias voltages in the forming process to effectively reduce the forming voltage of a one-transistor and one-resistance random access memory device. A bipolar incremental-step-pulse programming process is applied, and a complete operation pulse for t...

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Bibliographic Details
Published in:IEEE electron device letters 2018-06, Vol.39 (6), p.815-818
Main Authors: Zheng, Hao-Xuan, Chang, Ting-Chang, Xue, Kan-Hao, Su, Yu-Ting, Wu, Cheng-Hsien, Shih, Chih-Cheng, Tseng, Yi-Ting, Chen, Wen-Chung, Huang, Wei-Chen, Chen, Chun-Kuei, Miao, Xiang-Shui, Sze, Simon M.
Format: Article
Language:English
Subjects:
1T1R
Electrodes
forming voltage
incremental step pulse programming (ISPP)
Programming
Random access memory
Resistance
Resistance random access memory (RRAM)
Switches
Tin
Transistors
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Summary:This letter introduces a method of using bipolarity bias voltages in the forming process to effectively reduce the forming voltage of a one-transistor and one-resistance random access memory device. A bipolar incremental-step-pulse programming process is applied, and a complete operation pulse for the forming process is described. This method reduces forming voltage without any cost to the device performance, and the device maintains good reliability. The likely physical mechanism of this bipolar operation is also presented based on the measured electrical characteristics.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2831708