Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure

This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiN x /HfON dual dielectric layers. The...

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Bibliographic Details
Published in:IEEE electron device letters 2018-07, Vol.39 (7), p.995-998
Main Authors: Kim, Dong-Hwan, Park, Hongjong, Eom, Su-Keun, Jeong, Jun-Seok, Cha, Ho-Young, Seo, Kwang-Seok
Format: Article
Language:English
Subjects:
AlGaN/GaN-on-Si
Aluminum gallium nitride
Aluminum gallium nitrides
Continuous radiation
dual MIS
Gallium nitride
Gallium nitrides
gate recess
HEMTs
high-k
Integrated circuits
Ka-band
Logic gates
MIS (semiconductors)
MMIC
MMIC (circuits)
power amplifier
Power amplifiers
Power efficiency
Power generation
Radio frequency
Wide band gap semiconductors
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Summary:This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiN x /HfON dual dielectric layers. The fabricated 0.15- \mu \text{m} AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2834223