Raman Thermography of Peak Channel Temperature in $\beta$ -Ga 2 O 3 MOSFETs

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Bibliographic Details
Published in:IEEE electron device letters 2019-02, Vol.40 (2), p.189-192
Main Authors: Pomeroy, J. W., Middleton, C., Singh, M., Dalcanale, S., Uren, M. J., Wong, M. H., Sasaki, K., Kuramata, A., Yamakoshi, S., Higashiwaki, M., Kuball, M.
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2887278