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Raman Thermography of Peak Channel Temperature in $\beta$ -Ga 2 O 3 MOSFETs
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Published in: | IEEE electron device letters 2019-02, Vol.40 (2), p.189-192 |
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Main Authors: | , , , , , , , , , , |
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Language: | English |
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container_end_page | 192 |
container_issue | 2 |
container_start_page | 189 |
container_title | IEEE electron device letters |
container_volume | 40 |
creator | Pomeroy, J. W. Middleton, C. Singh, M. Dalcanale, S. Uren, M. J. Wong, M. H. Sasaki, K. Kuramata, A. Yamakoshi, S. Higashiwaki, M. Kuball, M. |
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doi_str_mv | 10.1109/LED.2018.2887278 |
format | article |
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title | Raman Thermography of Peak Channel Temperature in $\beta$ -Ga 2 O 3 MOSFETs |
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