0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In 2 O 3 ) Channel and Anodized High-$\kappa$ Al 2 O 3 Dielectric

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Bibliographic Details
Published in:IEEE electron device letters 2019-07, Vol.40 (7), p.1112-1115
Main Authors: Bhalerao, Sagar R., Lupo, Donald, Zangiabadi, Amirali, Kymissis, Ioannis, Leppaniemi, Jaakko, Alastalo, Ari, Berger, Paul R.
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2918492