Atomic-Level Analysis of Sub-5-nm-Thick Hf 0.5 Zr 0.5 O 2 and Characterization of Nearly Hysteresis-Free Ferroelectric FinFET

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Bibliographic Details
Published in:IEEE electron device letters 2019-08, Vol.40 (8), p.1233-1236
Main Authors: Tsai, Meng-Ju, Chen, Pin-Jui, Hsu, Chieng-Chung, Ruan, Dun-Bao, Hou, Fu-Ju, Peng, Po-Yang, Wu, Yung-Chun
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2922239