Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor against Hydrogen-Induced Degradation

Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc oxide (IGZO) with or without plasma fluorination treatment were fabricated and the sensitivity of their characteristics to hydrogen exposure was compared. Consistent with the lower hydrogen content revealed using secondary ion-mass...

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Bibliographic Details
Published in:IEEE electron device letters 2020-05, Vol.41 (5), p.1-1
Main Authors: Wang, Sisi, Shi, Runxiao, Li, Jiapeng, Lu, Lei, Xia, Zhihe, Kwok, Hoi Sing, Wong, Man
Format: Article
Language:English
Subjects:
Aluminum oxide
Degradation
Diffusion barriers
Fluorination
Gallium
Hydrogen
Hydrogen storage
Indium
Indium gallium zinc oxide
integration
Low temperature
Mass spectrometry
Photodiodes
Plasmas
Resilience
Semiconductor devices
Silicon
Sulfur hexafluoride
Thin film transistors
Zinc oxide
Zinc oxides
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Summary:Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc oxide (IGZO) with or without plasma fluorination treatment were fabricated and the sensitivity of their characteristics to hydrogen exposure was compared. Consistent with the lower hydrogen content revealed using secondary ion-mass spectrometry, TFTs built with fluorinated IGZO were shown to exhibit improved intrinsic resilience against hydrogen-induced degradation. Further enhanced by the incorporation of aluminum oxide as a hydrogen diffusion-barrier, such resilience is beneficial to the integration of fluorinated IGZO TFTs with hydrogen-containing devices, such as photodiodes based on amorphous hydrogenated silicon and TFTs based on low-temperature polycrystalline silicon.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2983789