Effect of Pillar Ripple on Static and Dynamic Trade-offs in Superjunction MOSFETs

Multi-epitaxially grown superjunctions feature a fluctuation of the doping concentration (ripple) in the pillars and the ripple is highly dependent on the supplied thermal energy during the fabrication. This study thoroughly investigates the relationship between the ripple in the pillars and the sta...

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Bibliographic Details
Published in:IEEE electron device letters 2020-05, Vol.41 (5), p.1-1
Main Authors: Kang, H., Donato, N., Udrea, F.
Format: Article
Language:English
Subjects:
Doping
Dynamic characteristics
Epitaxial growth
Epitaxial layers
Figures of merit
Gate ringing
Logic gates
MOSFET
MOSFETs
Resistance
Ripple
Ripples
Superjunction
Switches
Thermal energy
Tradeoffs
Turn-off loss
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Summary:Multi-epitaxially grown superjunctions feature a fluctuation of the doping concentration (ripple) in the pillars and the ripple is highly dependent on the supplied thermal energy during the fabrication. This study thoroughly investigates the relationship between the ripple in the pillars and the static/dynamic characteristics of the device. The ripple dependent trade-offs in terms of the specific resistance and turn-off switching loss will be able to provide a guide for developing fine pitch superjunction devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2985203