Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO 2 Gate Dielectric and Excellent Uniformity

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2020-06, Vol.41 (6), p.856-859
Main Authors: Samanta, Subhranu, Chand, Umesh, Xu, Shengqiang, Han, Kaizhen, Wu, Ying, Wang, Chengkuan, Kumar, Annie, Velluri, Hasita, Li, Yida, Fong, Xuanyao, Thean, Aaron Voon-Yew, Gong, Xiao
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2985787