145-MW/cm 2 Heteroepitaxial Diamond MOSFETs With NO 2 p-Type Doping and an Al 2 O 3 Passivation Layer

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Bibliographic Details
Published in:IEEE electron device letters 2020-07, Vol.41 (7), p.1066-1069
Main Authors: Saha, Niloy Chandra, Oishi, Toshiyuki, Kim, Seongwoo, Kawamata, Yuki, Koyama, Koji, Kasu, Makoto
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2997897