Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor

We present scaling and variation predictions for a strained-silicon (s-Si) fin-based high electron mobility transistor (FinHEMT) with well-tempered, short-channel characteristics. Using device simulation calibrated with experimental data, we predict that the FinHEMT can achieve high electron mobilit...

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Bibliographic Details
Published in:IEEE electron device letters 2020-11, Vol.41 (11), p.1621-1624
Main Authors: Kim, Sung-Ho, Park, Jong Yul, Chang, Jiwon, Kim, Kyung Rok
Format: Article
Language:English
Subjects:
effective mobility
Electrons
FinFETs
FinHEMT
HEMTs
High electron mobility transistors
Ions
Logic gates
MODFETs
quantum well
Quantum wells
scalability
Semiconductor devices
Silicon
Silicon germanium
Surface roughness
surface roughness scattering
Transistors
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Summary:We present scaling and variation predictions for a strained-silicon (s-Si) fin-based high electron mobility transistor (FinHEMT) with well-tempered, short-channel characteristics. Using device simulation calibrated with experimental data, we predict that the FinHEMT can achieve high electron mobility (~1100 cm 2 /Vs) and enhance effective mobility (up to 2x) by suppressing the surface roughness scattering effect in the Si quantum well (QW) channel. Moreover, excellent scalability of the FinHEMT ON-current ( {I}_{{\textit {ON}}} >1.1 mA/ \mu \text{m} at {L}_{G} < 10 nm) is predicted as the high channel mobility can reduce the underlap series resistance in the scaled device. Owing to this low underlap resistivity, geometrical variations of fin width and underlap length have little effect on the ON-current in FinHEMT.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3026053