345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond

• Published in: IEEE electron device letters 2021-06, Vol.42 (6), p.903-906
• Main Authors: Saha, Niloy Chandra, Kim, Seong-Woo, Oishi, Toshiyuki, Kawamata, Yuki, Koyama, Koji, Kasu, Makoto
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Al₂O₃ thick passivation; Current leakage; Diamond; diamond MOSFET; Diamonds; Doping; Electric breakdown; Field effect transistors; heteroepitaxial diamond; high BFOM; Leakage current; Leakage currents; Logic gates; Metal oxide semiconductors; MOSFET; MOSFETs; Nitrogen dioxide; NO₂ p-type doping; Passivation; Passivity; Semiconductor devices
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2021.3075687

Diamond metal oxide semiconductor field effect transistors (MOSFETs) on high-quality heteroepitaxial diamond (Kenzan diamond ® ) with NO 2 p-type doping and an Al 2 O 3 passivation overlayer exhibited a high off-state breakdown voltage of −2608 V. The 100-nm-thick Al 2 O 3 passivation overlayer on the hole channel increased the high-voltage-handling capability of the MOSFETs by substantially suppressing the off-state drain leakage currents. The MOSFET showed a specific on-resistance of 19.74 \text{m}\Omega \cdot cm 2 and a maximum drain current density of −288 mA/mm, with an extremely low gate leakage current < 10^{-{6}} mA/mm. The Baliga's Figure-Of-Merits was experimentally determined to be 344.6 MW/cm 2 , and the maximum DC power density was observed to be 21.0 W/mm.