Photo-Detectivity Modulation in Complementary Light-to-Frequency Conversion Circuits via Oxygen Vacancy Controlled Amorphous Indium-Gallium-Zinc Oxide Films

Herein, light-to-frequency conversion circuits (LFCs) using n-type amorphous indium-gallium-zinc oxide thin film transistors (a-IGZO TFTs) and p-type single-walled carbon nanotube (SWNT) TFTs are proposed as circuit level photodetector. The photoresponse of a-IGZO TFTs under visible spectrum is adju...

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Bibliographic Details
Published in:IEEE electron device letters 2021-09, Vol.42 (9), p.1315-1318
Main Authors: Seo, Seung Gi, Jeong, Jinheon, Jin, Sung Hun
Format: Article
Language:English
Subjects:
a-IGZO
Annealing
Circuits
Conversion
Gallium
Gold
Indium
Indium gallium zinc oxide
Interactive systems
Internet of Things
Inverters
light-to-frequency converter
Lighting
Logic gates
Oscillators
Oxide coatings
Photodetectors
Photoelectrons
photosensitive inverters
Photosensitivity
Semiconductor devices
Single wall carbon nanotubes
SWNT
thin film transistor
Thin film transistors
Vacancies
Visible spectrum
X ray photoelectron spectroscopy
Zinc oxide
Zinc oxides
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Summary:Herein, light-to-frequency conversion circuits (LFCs) using n-type amorphous indium-gallium-zinc oxide thin film transistors (a-IGZO TFTs) and p-type single-walled carbon nanotube (SWNT) TFTs are proposed as circuit level photodetector. The photoresponse of a-IGZO TFTs under visible spectrum is adjusted with control of annealing temperature condition, which is closely related with oxygen vacancy level, validated by X-ray photoelectron spectroscopy (XPS) and band diagrams in the TFTs. With optimized annealing temperature for a-IGZO TFTs, LFCs are successfully demonstrated by photosensitive complementary inverters and their 3-stage ring oscillators with power and wavelength dependency of light. This result is expected to be applicable to the newly conceived internet-of-things (IoT) sensor systems including interactive displays.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3099066