A Sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor Based on ZnO/AgNW Schottky Contact

• Published in: IEEE electron device letters 2021-12, Vol.42 (12), p.1790-1793
• Main Authors: Nogueira, Gabriel L., Vieira, Douglas H., Morais, Rogerio M., Serbena, Jose P. M., Seidel, Keli F., Alves, Neri
• Format: Article
• Language: English
• Subjects: Computer architecture; Electrodes; Electrolytes; Field effect transistors; Field-effect transistor; Logic gates; Microprocessors; Nanowires; Schottky diode; Schottky diodes; Semiconductor devices; spray-coating; Transconductance; Transistors; vertical electrolyte-gated transistor; Zinc oxide; Zinc oxides
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2021.3120928

Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an {I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}} ratio of 10 4 , an on-current density of 65.3 mA/cm 2 and a normalized transconductance of 113.4 mS/cm 2 . Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.