High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing

We report an enhancement-mode (E-mode) {p} -channel GaN heterojunction field-effect transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold swing is experimentally achieved in the E-mode GaN {p} -channel transistors on an unintentionally doped GaN interlayer for th...

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Bibliographic Details
Published in:IEEE electron device letters 2022-04, Vol.43 (4), p.533-536
Main Authors: Yin, Yidi, Lee, Kean Boon
Format: Article
Language:English
Subjects:
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Enhancement mode
Gallium nitride
Gallium nitrides
gate recess
Leakage currents
Logic gates
Plasmas
subthreshold swing
Threshold voltage
threshold voltage hysteresis
Transistors
Two dimensional hole gas
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Summary:We report an enhancement-mode (E-mode) {p} -channel GaN heterojunction field-effect transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold swing is experimentally achieved in the E-mode GaN {p} -channel transistors on an unintentionally doped GaN interlayer for the first time by using a low-power plasma gate recessing etch and gate dielectric deposition pre-treatment. The fabricated {p} -channel transistors exhibit excellent E-mode performance with a threshold voltage of −1.53 V, an effective on-resistance of 1.0 \text{k}\Omega .mm, a peak transconductance of 1.0 mS/mm, and a high \text{I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}} ratio > 10 7 . Bi-directional gate sweep measurements on the p-channel devices show a threshold voltage shift of 0.12 V and an increased subthreshold swing of 107 mV/dec. In addition, the dual-channel conduction mechanism in the {p} -channel GaN transistors is presented and discussed.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3152308