High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

• Published in: IEEE electron device letters 2022-10, Vol.43 (10), p.1625-1628
• Main Authors: Tang, Shun-Wei, Huang, Zhen-Hong, Chen, Szu-Chia, Lin, Wei-Syuan, de Jaeger, Brice, Wellekens, Dirk, Borga, Matteo, Bakeroot, Benoit, Decoutere, Stefaan, Wu, Tian-Li
• Format: Article
• Language: English
• Subjects: Aluminum gallium nitride; Aluminum gallium nitrides; Breakdown; Electric breakdown; Failure rates; Gallium nitrides; GaN HEMTs; HEMTs; High electron mobility transistors; lifetime extrapolation; Logic gates; MODFETs; Regrowth p-GaN; Robustness; Stability; Threshold voltage; Time dependence; time-dependent gate bias; Wide band gap semiconductors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2022.3198876

In this work, we demonstrate enhancement-mode regrown p-GaN gate devices with high threshold voltage as well as a robust forward time-dependent gate breakdown (TDGB) stability. The regrown p-GaN gate HEMTs are fabricated with two different AlGaN barriers. Devices with 16nm Al0.235 Ga0.765 N yield a \text{V}_{\text {TH}} of 1.5V and a high threshold voltage ( \text{V}_{\text {TH}} ) of 2.7V is observed for 7nm AlGaN along with a gate breakdown voltage of more than 10V. Lastly, the regrown p-GaN gate HEMTs with 7nm AlGaN barrier demonstrate an operating \text{V}_{\text {G}} of 7.46V and 7V for 1% failure rate of 10-year lifetime at 150°C and 25°C, which is amongst the highest values compared to the reported literature for regrown p-GaN gate HEMTs.