Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices

In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( \tex...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2022-10, Vol.43 (10), p.1609-1612
Main Authors: Odabasi, Oguz, Ghobadi, Amir, Gamze Ulusoy Ghobadi, Turkan, Unal, Yakup, Salkim, Gurur, Basar, Gunes, Butun, Bayram, Ozbay, Ekmel
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMTs
annealing temperatures
Bias
Bulk density
Contact resistance
Contact stresses
Crystal defects
Crystal structure
HEMTs
Logic gates
Low temperature
ohmic contact
Ohmic contacts
Plasma temperature
recessed ohmic contacts
stability
Surface morphology
surface roughness
Surface stability
Surface treatment
Temperature measurement
Threshold voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( \text{V}_{\text {th}} ) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630°C, 10 minutes) is adopted with recess etch, and contact resistances < 0.1\Omega ~\cdot mm with low sheet resistances are achieved. The positive impact of this low thermal budget process on surface morphology, DC operation, long-term stability, and forward gate bias stress of the device is studied.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3199569