Stretchable and Transparent Interconnects With Hybrid Ag-Nanomesh/Indium Tin Oxide Structure

We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conduc...

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Bibliographic Details
Published in:IEEE electron device letters 2022-10, Vol.43 (10), p.1768-1771
Main Authors: Kim, Young Ho, Kang, Hyuk-Jun, Na, Bock Soon, Lee, Jihye, Choi, Dae-Geun, Park, Chan Woo
Format: Article
Language:English
Subjects:
Circuits
hybrid
Hybrid structures
Indium tin oxide
Indium tin oxides
Integrated circuit interconnections
Interconnections
Metals
nanomesh
Nanoscale devices
nanotransfer printing
Parameter modification
Photolithography
Printing
Resistance
Stretchability
Stretchable interconnects
Substrates
Thin films
transparent
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Summary:We demonstrate a hybrid structure for both transparent and stretchable interconnects, that provides high conductance, stretchability, and transparency simultaneously. In this structure, a serpentine-shaped discrete Ag nanomesh formed by the nanotransfer printing technique works as the primary conducting layer, while an indium tin oxide thin film covering it allows planar contact with other devices for proper functions as interconnects. We have confirmed that the hybrid serpentine interconnects provide high conductance and stretching reliability comparable to that of opaque ductile metals, and the transmittance and sheet resistance can be controlled independently by modifying the structural parameters of the mesh layer. Based on conventional photolithography and etching processes compatible with the current flexible circuit technology, the new hybrid interconnect can be utilized in various devices requiring highly integrated transparent and stretchable circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3200020