1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET

We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without ext...

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Bibliographic Details
Published in:IEEE electron device letters 2023-03, Vol.44 (3), p.1-1
Main Authors: Hsieh, E Ray, Luo, Yu Ming, Huang, Yi Xiang, Su, Huan Shiang, Lin, Rui Qi, Lin, Yu-Hsien, Chang, Kai Hsiang, Shen, Ting Ho, Liu, Chuan Hsi
Format: Article
Language:English
Subjects:
Avalanche-breakdown
Circuits
Dielectrics
Electric breakdown
Embedded memory
Field effect transistors
FinFETs
Impact-ionization
Junctions
Logic gates
One-time-programmable (OTP) memory
Programming
Semiconductor devices
Unit cell
Voltage
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Summary:We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F 2 (0.0502 μm 2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3237626