1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET

We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without ext...

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Published in:IEEE electron device letters 2023-03, Vol.44 (3), p.1-1
Main Authors: Hsieh, E Ray, Luo, Yu Ming, Huang, Yi Xiang, Su, Huan Shiang, Lin, Rui Qi, Lin, Yu-Hsien, Chang, Kai Hsiang, Shen, Ting Ho, Liu, Chuan Hsi
Format: Article
Language:English
Subjects:
Avalanche-breakdown
Circuits
Dielectrics
Electric breakdown
Embedded memory
Field effect transistors
FinFETs
Impact-ionization
Junctions
Logic gates
One-time-programmable (OTP) memory
Programming
Semiconductor devices
Unit cell
Voltage
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cited_by cdi_FETCH-LOGICAL-c292t-ded6e7da66b506a3121ea89c4d8df11fb1ab8db4d71faa2311760210748bd913
cites cdi_FETCH-LOGICAL-c292t-ded6e7da66b506a3121ea89c4d8df11fb1ab8db4d71faa2311760210748bd913
container_end_page 1
container_issue 3
container_start_page 1
container_title IEEE electron device letters
container_volume 44
creator Hsieh, E Ray
Luo, Yu Ming
Huang, Yi Xiang
Su, Huan Shiang
Lin, Rui Qi
Lin, Yu-Hsien
Chang, Kai Hsiang
Shen, Ting Ho
Liu, Chuan Hsi
description We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F 2 (0.0502 μm 2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.
doi_str_mv 10.1109/LED.2023.3237626
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2023_3237626</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10018395</ieee_id><sourcerecordid>2779674884</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-ded6e7da66b506a3121ea89c4d8df11fb1ab8db4d71faa2311760210748bd913</originalsourceid><addsrcrecordid>eNpNkD1PwzAQhi0EEqWwMzBEYoHBrc927GREtAWkoi5dkeXEF0jVOMVOh_57XLUD00mn572Ph5B7YBMAVk6X89mEMy4mggutuLogI8jzgrJciUsyYloCFcDUNbmJccMYSKnliHwBHYL1sY1DHzKgsd-HGqf1j_Uet1MXbOupa3uH2ROsYfacrTzSoe2Q7kL_HWzX2WqL2Sd2fThkrc9AUt9li9Yv5utbctXYbcS7cx2Tdeq-vtPl6u3j9WVJa17ygTp0CrWzSlU5U1YAB7RFWUtXuAagqcBWhauk09BYywWAVoxD-qmoXAliTB5PY9NJv3uMg9mkN3zaaLjWpUpcIRPFTlQd-hgDNmYX2s6GgwFmjg5NcmiODs3ZYYo8nCItIv7DGRSizMUfcZprTQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2779674884</pqid></control><display><type>article</type><title>1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET</title><source>IEEE Xplore (Online service)</source><creator>Hsieh, E Ray ; Luo, Yu Ming ; Huang, Yi Xiang ; Su, Huan Shiang ; Lin, Rui Qi ; Lin, Yu-Hsien ; Chang, Kai Hsiang ; Shen, Ting Ho ; Liu, Chuan Hsi</creator><creatorcontrib>Hsieh, E Ray ; Luo, Yu Ming ; Huang, Yi Xiang ; Su, Huan Shiang ; Lin, Rui Qi ; Lin, Yu-Hsien ; Chang, Kai Hsiang ; Shen, Ting Ho ; Liu, Chuan Hsi</creatorcontrib><description>We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F 2 (0.0502 μm 2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2023.3237626</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Avalanche-breakdown ; Circuits ; Dielectrics ; Electric breakdown ; Embedded memory ; Field effect transistors ; FinFETs ; Impact-ionization ; Junctions ; Logic gates ; One-time-programmable (OTP) memory ; Programming ; Semiconductor devices ; Unit cell ; Voltage</subject><ispartof>IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-ded6e7da66b506a3121ea89c4d8df11fb1ab8db4d71faa2311760210748bd913</citedby><cites>FETCH-LOGICAL-c292t-ded6e7da66b506a3121ea89c4d8df11fb1ab8db4d71faa2311760210748bd913</cites><orcidid>0000-0001-8457-704X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10018395$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Hsieh, E Ray</creatorcontrib><creatorcontrib>Luo, Yu Ming</creatorcontrib><creatorcontrib>Huang, Yi Xiang</creatorcontrib><creatorcontrib>Su, Huan Shiang</creatorcontrib><creatorcontrib>Lin, Rui Qi</creatorcontrib><creatorcontrib>Lin, Yu-Hsien</creatorcontrib><creatorcontrib>Chang, Kai Hsiang</creatorcontrib><creatorcontrib>Shen, Ting Ho</creatorcontrib><creatorcontrib>Liu, Chuan Hsi</creatorcontrib><title>1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F 2 (0.0502 μm 2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.</description><subject>Avalanche-breakdown</subject><subject>Circuits</subject><subject>Dielectrics</subject><subject>Electric breakdown</subject><subject>Embedded memory</subject><subject>Field effect transistors</subject><subject>FinFETs</subject><subject>Impact-ionization</subject><subject>Junctions</subject><subject>Logic gates</subject><subject>One-time-programmable (OTP) memory</subject><subject>Programming</subject><subject>Semiconductor devices</subject><subject>Unit cell</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpNkD1PwzAQhi0EEqWwMzBEYoHBrc927GREtAWkoi5dkeXEF0jVOMVOh_57XLUD00mn572Ph5B7YBMAVk6X89mEMy4mggutuLogI8jzgrJciUsyYloCFcDUNbmJccMYSKnliHwBHYL1sY1DHzKgsd-HGqf1j_Uet1MXbOupa3uH2ROsYfacrTzSoe2Q7kL_HWzX2WqL2Sd2fThkrc9AUt9li9Yv5utbctXYbcS7cx2Tdeq-vtPl6u3j9WVJa17ygTp0CrWzSlU5U1YAB7RFWUtXuAagqcBWhauk09BYywWAVoxD-qmoXAliTB5PY9NJv3uMg9mkN3zaaLjWpUpcIRPFTlQd-hgDNmYX2s6GgwFmjg5NcmiODs3ZYYo8nCItIv7DGRSizMUfcZprTQ</recordid><startdate>20230301</startdate><enddate>20230301</enddate><creator>Hsieh, E Ray</creator><creator>Luo, Yu Ming</creator><creator>Huang, Yi Xiang</creator><creator>Su, Huan Shiang</creator><creator>Lin, Rui Qi</creator><creator>Lin, Yu-Hsien</creator><creator>Chang, Kai Hsiang</creator><creator>Shen, Ting Ho</creator><creator>Liu, Chuan Hsi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8457-704X</orcidid></search><sort><creationdate>20230301</creationdate><title>1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET</title><author>Hsieh, E Ray ; Luo, Yu Ming ; Huang, Yi Xiang ; Su, Huan Shiang ; Lin, Rui Qi ; Lin, Yu-Hsien ; Chang, Kai Hsiang ; Shen, Ting Ho ; Liu, Chuan Hsi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-ded6e7da66b506a3121ea89c4d8df11fb1ab8db4d71faa2311760210748bd913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Avalanche-breakdown</topic><topic>Circuits</topic><topic>Dielectrics</topic><topic>Electric breakdown</topic><topic>Embedded memory</topic><topic>Field effect transistors</topic><topic>FinFETs</topic><topic>Impact-ionization</topic><topic>Junctions</topic><topic>Logic gates</topic><topic>One-time-programmable (OTP) memory</topic><topic>Programming</topic><topic>Semiconductor devices</topic><topic>Unit cell</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsieh, E Ray</creatorcontrib><creatorcontrib>Luo, Yu Ming</creatorcontrib><creatorcontrib>Huang, Yi Xiang</creatorcontrib><creatorcontrib>Su, Huan Shiang</creatorcontrib><creatorcontrib>Lin, Rui Qi</creatorcontrib><creatorcontrib>Lin, Yu-Hsien</creatorcontrib><creatorcontrib>Chang, Kai Hsiang</creatorcontrib><creatorcontrib>Shen, Ting Ho</creatorcontrib><creatorcontrib>Liu, Chuan Hsi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsieh, E Ray</au><au>Luo, Yu Ming</au><au>Huang, Yi Xiang</au><au>Su, Huan Shiang</au><au>Lin, Rui Qi</au><au>Lin, Yu-Hsien</au><au>Chang, Kai Hsiang</au><au>Shen, Ting Ho</au><au>Liu, Chuan Hsi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2023-03-01</date><risdate>2023</risdate><volume>44</volume><issue>3</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programmable (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semi-conductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F 2 (0.0502 μm 2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2023.3237626</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0001-8457-704X</orcidid></addata></record>
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subjects Avalanche-breakdown
Circuits
Dielectrics
Electric breakdown
Embedded memory
Field effect transistors
FinFETs
Impact-ionization
Junctions
Logic gates
One-time-programmable (OTP) memory
Programming
Semiconductor devices
Unit cell
Voltage
title 1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T00%3A50%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=1-transistor%201-source/channel/drain-diode%20(1T1D)%20One-time-programmable%20Memory%20in%2014-nm%20FinFET&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Hsieh,%20E%20Ray&rft.date=2023-03-01&rft.volume=44&rft.issue=3&rft.spage=1&rft.epage=1&rft.pages=1-1&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2023.3237626&rft_dat=%3Cproquest_cross%3E2779674884%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c292t-ded6e7da66b506a3121ea89c4d8df11fb1ab8db4d71faa2311760210748bd913%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2779674884&rft_id=info:pmid/&rft_ieee_id=10018395&rfr_iscdi=true