Corrections to "Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal" [Feb 12 248-250]

In The above letter [1] , the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The conclusions of this letter will not b...

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Bibliographic Details
Published in:IEEE electron device letters 2023-06, Vol.44 (6), p.1015-1015
Main Authors: Lee, Yao-Jen, Hsueh, Fu-Kuo, Current, Michael I., Wu, Ching-Yi, Chao, Tien-Sheng
Format: Article
Language:English
Subjects:
Annealing
Electromagnetic heating
Phosphorus
Silicon
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Summary:In The above letter [1] , the SIMS profiles in Fig. 1 are for diffusion characteristics of ion-implanted phosphorus before/after MWA. We did not mention the concentration in the text of the letter. However, the dose listed in the figure caption is incorrect. The conclusions of this letter will not be impacted by the revision.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3271079