Can Interface Layer be Really Free for Hf x Zr 1- x O 2 Based Ferroelectric Field-Effect Transistors With Oxide Semiconductor Channel?

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Bibliographic Details
Published in:IEEE electron device letters 2024-03, Vol.45 (3), p.368-371
Main Authors: Cui, Tianning, Chen, Danyang, Dong, Yulong, Fan, Yuyan, Yao, Zikang, Duan, Hongxiao, Liu, Jingquan, Liu, Gang, Si, Mengwei, Li, Xiuyan
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3355523