Direct Growth of van der Waals Graphene/MAPbI₃ Heterojunction for Wide Spectral Photodetection

Here, we demonstrate a high-performance photodetector for wide spectral detection (405 nm-808 nm). The device is based on 2D/3D van der Waals heterojunction (vHJ) by directly integrating MAPbI3 single crystal (SC) onto monolayer graphene with a developed inverse temperature crystallization method (D...

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Bibliographic Details
Published in:IEEE electron device letters 2024-06, Vol.45 (6), p.996-999
Main Authors: Wang, Zeshu, Jin, Jialun, Geng, Xiangshun, Wang, Zhenze, Dun, Guanhua, Du, Jingbo, Qin, Ken, Peng, Jiali, Wang, Yuhao, He, Yichu, Xie, Dan, Tian, He, Yang, Yi, Ren, Tian-Ling
Format: Article
Language:English
Subjects:
Absorption
Crystallization
Graphene
Heterojunctions
Lighting
MAPbI
Perovskites
photodetector
Photodetectors
Photometers
self-powered
single crystal
Single crystals
Time factors
van der Waals heterojunction
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Summary:Here, we demonstrate a high-performance photodetector for wide spectral detection (405 nm-808 nm). The device is based on 2D/3D van der Waals heterojunction (vHJ) by directly integrating MAPbI3 single crystal (SC) onto monolayer graphene with a developed inverse temperature crystallization method (DITC). The proposed photodetector exhibits a high responsivity of 1.45 A/W, an excellent detectivity of {6}.{67} \times {10} ^{{12}} Jones, an impressive on/off ratio of nearly 10^{{4}} . Moreover, the fabricated device also shows an excellent self-powered behavior with a high 3-dB bandwidth of 3.5 kHz, and a fast rise/fall time of 69 \, \mu \text{s}/138 \, \mu \text{s} . Our work provides a novel insight for the design of high-performance photodetector based on 2D/3D vHJ.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3390184