P-Channel HFET Utilizing 2D Hole Gas in Si-Face 3C/4H-SiC Heterostructure

• Published in: IEEE electron device letters 2024-09, Vol.45 (9), p.1562-1565
• Main Authors: Sazawa, Hiroyuki, Nakajima, Akira, Kuboya, Shigeyuki, Umezawa, Hitoshi, Kato, Tomohisa, Tanaka, Yasunori
• Format: Article
• Language: English
• Subjects: 2D hole gas; chemical vapor deposition (CVD); Hall effect; HEMTs; heterojunction field effect transistor; Logic gates; MODFETs; SiC; Silicon carbide; Temperature measurement; Transistors; Two dimensional hole gas
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2024.3424396

A p-channel heterojunction field effect transistor (HFET) utilizing 2D hole gas (2DHG) in a Si-face 3C/4H-SiC heterostructure was demonstrated for the first time. A 36-nm-thick undoped single-crystal 3C-SiC layer was epitaxially grown on a step-controlled Si-face 4H-SiC substrate by thermal chemical vapor deposition. The presence of 2DHG at the 3C/4H heterointerface was confirmed by Hall effect measurements. At room temperature, the measured hole mobility and sheet carrier density were 30 cm2/Vs and {1}.{6}\times {10} ^{{13}} cm-2, respectively. The hole density is temperature-independent between 78 and 293 K owing to the nature of polarization-induced carriers. P-channel HFETs were fabricated in the 3C/4H heterostructure, and transistor operation with a high-current conductivity of 66.2 mA/mm were also demonstrated.