Performance Comparisons of GaN Vertical Transistors With Sidewalls Treated by TMAH and H₃PO₄ Solutions

• Published in: IEEE electron device letters 2024-10, Vol.45 (10), p.1744-1747
• Main Authors: Chu, Yu-Chuan, Chang, Chih-Kang, Zhang, Zhi-Xiang, Chauhan, Anuj, Chung, Yi-Ta, Wang, Tien-Yu, Chen, Miin-Jang, Lai, Wei-Chi, Huang, Jian-Jang
• Format: Article
• Language: English
• Subjects: Carrier density; Carrier mobility; Crystal defects; Current carriers; Current density; Dry etching; Electrical properties; Etching; Gallium nitride; Gallium nitrides; GaN; Logic gates; MOSFET; MOSFETs; Performance assessment; Surface treatment; Threshold voltage; Transistors; vertical trench gate transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2024.3448196

Despite successfully demonstrating GaN trench gate vertical transistors for power electronics, the devices possess inconsistent electrical properties that depend strongly on the process conditions. This work compares the vertical transistors' threshold voltages and current densities with sidewalls treated by either H 3 PO 4 or TMAH (tetramethylammonium hydroxide). With the H 3 PO 4 sidewall post-etching treatment, the device's threshold voltage can be restored to a higher value of 7.2 V by removing donor-type defects incurred during sidewall dry etching in the p-GaN region. In comparison, the threshold voltage of the TMAH-treated device is 0.1 V. Surface treatment also affects the current density because it changes the effective gate length and sidewall orientation. A flatter sidewall profile after H 3 PO 4 treatment results in a larger effective gate length and smaller carrier mobility when transporting in the semipolar GaN crystalline plane. The current density of the H 3 PO 4 -treated device is smaller than that treated by TMAH.