Tunable (,) (LSMO) Ferromagnetic Thin Films for Radio Frequency Applications

In this letter, an original work in tunable (La,Sr)MnO 3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO 2 /Si heterostructure. Interdigitated ca...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2009-01, Vol.19 (1), p.36-38
Main Authors: Al Ahmad, M., Young Taek Lee, Chae Il Cheon, Eui-Jung Yun, Plana, R.
Format: Article
Language:English
Subjects:
Capacitors
Chemicals
Electrostatics
Ferromagnetic
Indium tin oxide
material parameters
Radio frequency
rm La
Semiconductor thin films
Sputtering
Strontium
Transistors
tunability
tunable circuit
tunable inductor
Voltage
{\rm Sr}){\rm MnO}_{3} (LSMO
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Summary:In this letter, an original work in tunable (La,Sr)MnO 3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO 2 /Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2008.2008575