Variation in RF Performance of MOSFETs Due to Substrate Digital Noise Coupling

In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including f T and f max , showed substantial change up to ~20% with realistic level of noise injection. It is shown that such change...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2010-07, Vol.20 (7), p.384-386
Main Authors: Oh, Yongho, Jeon, Sanggeun, Rieh, Jae-Sung
Format: Article
Language:English
Subjects:
Digital
Fluctuation
Fluctuations
III-V semiconductor materials
Joining
Microwaves
MOSFETs
Noise
Noise generators
Noise level
Radio frequencies
Radio frequency
Read only memory
Scattering parameters
Substrate coupling
substrate noise
Testing
Threshold voltage
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Summary:In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including f T and f max , showed substantial change up to ~20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage ( V T ) variation. The observed V T variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2010.2049431