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X-Band GaN Power Amplifier for Future Generation SAR Systems

A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation Synthetic Aperture Radar systems is presented. The HPA delivers 14 W of output power, more than 38% of PAE in the frequency bandwidth from 8.8 to 10.4 GHz. Its linear gain is greate...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2014-04, Vol.24 (4), p.266-268
Main Authors: Resca, Davide, Raffo, Antonio, Di Falco, Sergio, Scappaviva, Francesco, Vadala, Valeria, Vannini, Giorgio
Format: Article
Language:English
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Summary:A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation Synthetic Aperture Radar systems is presented. The HPA delivers 14 W of output power, more than 38% of PAE in the frequency bandwidth from 8.8 to 10.4 GHz. Its linear gain is greater than 25 dB. For the first time an MMIC X-band HPA has been designed by directly measuring the transistor behavior at the current generator plane. In particular, optimum device load-line has been selected according to the chosen performance tradeoffs.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2014.2299552