A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure

In this letter, a packaged Low Noise Amplifier (LNA) operating at 670 GHz is presented. The LNA uses a new generation of 25 nm InP HEMT with 1.5 THz f MAX . The eight-stage amplifier shows approximately 16 dB associated gain in package with a noise figure ranging from 9.4-9.9 dB measured across a 15...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2016-10, Vol.26 (10), p.837-839
Main Authors: Deal, W. R., Zamora, A., Leong, K., Liu, P. H., Yoshida, W., Zhou, J., Lange, M., Gorospe, B., Nguyen, K., Mei, X. B.
Format: Article
Language:English
Subjects:
Coplanar waveguide
Gain
HEMT
HEMTs
III-V semiconductor materials
Indium phosphide
low noise amplifier
MM-Wave
MMIC
MMICs
Noise measurement
sub-millimeter wave
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Summary:In this letter, a packaged Low Noise Amplifier (LNA) operating at 670 GHz is presented. The LNA uses a new generation of 25 nm InP HEMT with 1.5 THz f MAX . The eight-stage amplifier shows approximately 16 dB associated gain in package with a noise figure ranging from 9.4-9.9 dB measured across a 15 GHz bandwidth. These results represent better than 3 dB improvement in sensitivity to previously published InP HEMT results, and represent the lowest measured noise figure for any LNA at this operating frequency.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2016.2605458