A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network

This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2017-01, Vol.27 (1), p.55-57
Main Authors: Chang, Hong-Yeh, Lin, Chi-Hsien, Liu, Yu-Cheng, Li, Wen-Ping, Wang, Yu-Chi
Format: Article
Language:English
Subjects:
Frequency measurement
GaAs
Gallium arsenide
high efficiency
low phase noise oscillators
MMIC
Phase noise
pHEMT
Power generation
Transistors
Voltage measurement
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Summary:This letter presents design of a K-band high power high efficiency monolithic GaAs power oscillators using class-E load network with finite dc-feed inductance. To further extend the operation frequency up to millimeter-wave band with high efficiency, the core transistor is operated in the saturated region with overdriven condition to obtain the bifurcated current waveform. The proposed power oscillator is fabricated using a 0.15-μm GaAs pseudomorphic high-electron mobility transistor process, and it features a tuning range from 23.5 to 24.5 GHz, a peak efficiency of 19%, a maximum output power of 21 dBm, and a phase noise of -106.3 dBc/Hz at 1-MHz offset.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2016.2629978