Loading…

A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology

This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing a peak differential gain of 30 dB and a 3-dB small-signal bandwidth of around 50 GHz. Gain is...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE microwave and wireless components letters 2017-02, Vol.27 (2), p.177-179
Main Authors:	Furqan, Muhammad, Ahmed, Faisal, Heinemann, Bernd, Stelzer, Andreas
Format:	Article
Language:	English
Subjects:	Amplification Bandwidth Broadband Frequency measurement Gain High gain millimeter-wave circuits Positive feedback power amplifier Power amplifiers Power generation Semiconductor device measurement SiGe BiCMOS Silicon germanides Silicon germanium
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

cited_by	cdi_FETCH-LOGICAL-c293t-ebd81a5cb933ef64195e74b171004905950293076d020f4e7cae45dd45038b313
cites	cdi_FETCH-LOGICAL-c293t-ebd81a5cb933ef64195e74b171004905950293076d020f4e7cae45dd45038b313
container_end_page	179
container_issue	2
container_start_page	177
container_title	IEEE microwave and wireless components letters
container_volume	27
creator	Furqan, Muhammad Ahmed, Faisal Heinemann, Bernd Stelzer, Andreas
description	This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing a peak differential gain of 30 dB and a 3-dB small-signal bandwidth of around 50 GHz. Gain is enhanced by means of inductive positive feedback in the commonbase stage. By using optimally sized HBTs in the power stage and operating in the weak avalanche region, high output power is achieved. The designed PA achieves a peak differential Psat of 15.5 dBm at 160 GHz and a PAE of 7.2%, which is to-date the highest reported output power for PAs above 150 GHz, in Si-based technologies.
doi_str_mv	10.1109/LMWC.2016.2646910
format	article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LMWC_2016_2646910</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7839241</ieee_id><sourcerecordid>1868426818</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-ebd81a5cb933ef64195e74b171004905950293076d020f4e7cae45dd45038b313</originalsourceid><addsrcrecordid>eNo9kE1rwkAQhpfSQq3tDyi9BHredCb7kd2jhhoLigUtPS752OiKGrtRxP76Jig9zcvwvDPwEPKMECKCfptMv5MwApRhJLnUCDekh0IoirHkt11mSJGBvicPTbMGQK449shoEKAIBS2H2wAl0HT8G4zdckXTzO2Cz_pkfTDY7jeucm1qV3OX2mDokulsHixssdrVm3p5fiR3VbZp7NN19snX6H2RjOlkln4kgwktIs0O1OalwkwUuWbMVpKjFjbmOcYIwDUILaDlIJYlRFBxGxeZ5aIsuQCmcoasT14vd_e-_jna5mDW9dHv2pcGlVQ8kgpVS-GFKnzdNN5WZu_dNvNng2A6XabTZTpd5qqr7bxcOs5a-8_HiumII_sDiKRg1A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1868426818</pqid></control><display><type>article</type><title>A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology</title><source>IEEE Xplore (Online service)</source><creator>Furqan, Muhammad ; Ahmed, Faisal ; Heinemann, Bernd ; Stelzer, Andreas</creator><creatorcontrib>Furqan, Muhammad ; Ahmed, Faisal ; Heinemann, Bernd ; Stelzer, Andreas</creatorcontrib><description>This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing a peak differential gain of 30 dB and a 3-dB small-signal bandwidth of around 50 GHz. Gain is enhanced by means of inductive positive feedback in the commonbase stage. By using optimally sized HBTs in the power stage and operating in the weak avalanche region, high output power is achieved. The designed PA achieves a peak differential Psat of 15.5 dBm at 160 GHz and a PAE of 7.2%, which is to-date the highest reported output power for PAs above 150 GHz, in Si-based technologies.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2016.2646910</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplification ; Bandwidth ; Broadband ; Frequency measurement ; Gain ; High gain ; millimeter-wave circuits ; Positive feedback ; power amplifier ; Power amplifiers ; Power generation ; Semiconductor device measurement ; SiGe BiCMOS ; Silicon germanides ; Silicon germanium</subject><ispartof>IEEE microwave and wireless components letters, 2017-02, Vol.27 (2), p.177-179</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-ebd81a5cb933ef64195e74b171004905950293076d020f4e7cae45dd45038b313</citedby><cites>FETCH-LOGICAL-c293t-ebd81a5cb933ef64195e74b171004905950293076d020f4e7cae45dd45038b313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7839241$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27900,27901,54770</link.rule.ids></links><search><creatorcontrib>Furqan, Muhammad</creatorcontrib><creatorcontrib>Ahmed, Faisal</creatorcontrib><creatorcontrib>Heinemann, Bernd</creatorcontrib><creatorcontrib>Stelzer, Andreas</creatorcontrib><title>A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing a peak differential gain of 30 dB and a 3-dB small-signal bandwidth of around 50 GHz. Gain is enhanced by means of inductive positive feedback in the commonbase stage. By using optimally sized HBTs in the power stage and operating in the weak avalanche region, high output power is achieved. The designed PA achieves a peak differential Psat of 15.5 dBm at 160 GHz and a PAE of 7.2%, which is to-date the highest reported output power for PAs above 150 GHz, in Si-based technologies.</description><subject>Amplification</subject><subject>Bandwidth</subject><subject>Broadband</subject><subject>Frequency measurement</subject><subject>Gain</subject><subject>High gain</subject><subject>millimeter-wave circuits</subject><subject>Positive feedback</subject><subject>power amplifier</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Semiconductor device measurement</subject><subject>SiGe BiCMOS</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kE1rwkAQhpfSQq3tDyi9BHredCb7kd2jhhoLigUtPS752OiKGrtRxP76Jig9zcvwvDPwEPKMECKCfptMv5MwApRhJLnUCDekh0IoirHkt11mSJGBvicPTbMGQK449shoEKAIBS2H2wAl0HT8G4zdckXTzO2Cz_pkfTDY7jeucm1qV3OX2mDokulsHixssdrVm3p5fiR3VbZp7NN19snX6H2RjOlkln4kgwktIs0O1OalwkwUuWbMVpKjFjbmOcYIwDUILaDlIJYlRFBxGxeZ5aIsuQCmcoasT14vd_e-_jna5mDW9dHv2pcGlVQ8kgpVS-GFKnzdNN5WZu_dNvNng2A6XabTZTpd5qqr7bxcOs5a-8_HiumII_sDiKRg1A</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Furqan, Muhammad</creator><creator>Ahmed, Faisal</creator><creator>Heinemann, Bernd</creator><creator>Stelzer, Andreas</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20170201</creationdate><title>A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology</title><author>Furqan, Muhammad ; Ahmed, Faisal ; Heinemann, Bernd ; Stelzer, Andreas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-ebd81a5cb933ef64195e74b171004905950293076d020f4e7cae45dd45038b313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Amplification</topic><topic>Bandwidth</topic><topic>Broadband</topic><topic>Frequency measurement</topic><topic>Gain</topic><topic>High gain</topic><topic>millimeter-wave circuits</topic><topic>Positive feedback</topic><topic>power amplifier</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Semiconductor device measurement</topic><topic>SiGe BiCMOS</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Furqan, Muhammad</creatorcontrib><creatorcontrib>Ahmed, Faisal</creatorcontrib><creatorcontrib>Heinemann, Bernd</creatorcontrib><creatorcontrib>Stelzer, Andreas</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Furqan, Muhammad</au><au>Ahmed, Faisal</au><au>Heinemann, Bernd</au><au>Stelzer, Andreas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2017-02-01</date><risdate>2017</risdate><volume>27</volume><issue>2</issue><spage>177</spage><epage>179</epage><pages>177-179</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter presents the design of a 160 GHz cascode based differential power amplifier (PA) realized in a 130 nm SiGe BiCMOS technology. It consists of 4 driving stages and an output power stage, providing a peak differential gain of 30 dB and a 3-dB small-signal bandwidth of around 50 GHz. Gain is enhanced by means of inductive positive feedback in the commonbase stage. By using optimally sized HBTs in the power stage and operating in the weak avalanche region, high output power is achieved. The designed PA achieves a peak differential Psat of 15.5 dBm at 160 GHz and a PAE of 7.2%, which is to-date the highest reported output power for PAs above 150 GHz, in Si-based technologies.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2016.2646910</doi><tpages>3</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 1531-1309
ispartof	IEEE microwave and wireless components letters, 2017-02, Vol.27 (2), p.177-179
issn	1531-1309 2771-957X 1558-1764 2771-9588
language	eng
recordid	cdi_crossref_primary_10_1109_LMWC_2016_2646910
source	IEEE Xplore (Online service)
subjects	Amplification Bandwidth Broadband Frequency measurement Gain High gain millimeter-wave circuits Positive feedback power amplifier Power amplifiers Power generation Semiconductor device measurement SiGe BiCMOS Silicon germanides Silicon germanium
title	A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-24T07%3A29%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%2015.5-dBm%20160-GHz%20High-Gain%20Power%20Amplifier%20in%20SiGe%20BiCMOS%20Technology&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Furqan,%20Muhammad&rft.date=2017-02-01&rft.volume=27&rft.issue=2&rft.spage=177&rft.epage=179&rft.pages=177-179&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2016.2646910&rft_dat=%3Cproquest_cross%3E1868426818%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-ebd81a5cb933ef64195e74b171004905950293076d020f4e7cae45dd45038b313%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1868426818&rft_id=info:pmid/&rft_ieee_id=7839241&rfr_iscdi=true