A Millimeter-Wave CMOS Dual-Bandpass T/R Switch With Dual-Band LC Network

• Published in: IEEE microwave and wireless components letters 2017-07, Vol.27 (7), p.654-656
• Main Authors: Um, Youngman, Nguyen, Cam
• Format: Article
• Language: English
• Subjects: Bandpass; BiCMOS; CMOS; Compression tests; Dual band; dual bandpass; dual-band circuit; Insertion; Metal oxide semiconductors; millimeter wave; Ports (Computers); Resonators; RFIC; Semiconductor devices; Silicon germanides; switch; Switches; Switching circuits; Switching theory; T/R switch; Transistors; Transmission line measurements
• ISSN: 1531-1309; 2771-957X; 1558-1764; 2771-9588
• DOI: 10.1109/LMWC.2017.2711535

Fully integrated 24/60-GHz concurrent dual-bandpass transmit/receive (T/R) switch in 0.18-μm SiGe BiCMOS process is presented. The developed T/R switch consists of dual-band LC networks and resonators with shunt nMOS transistors performing the switching function. In the receiving (RX) mode, the measured insertion losses (ILs) and isolations (ISOs) are 4.5 and 16 dB at 24 GHz, and 5 and 18.3 dB at 60 GHz, respectively. The ILs and ISOs for the transmitting (TX) mode are 6.7 and 18.2 dB at 24 GHz, and 8.5 and 20.8 dB at 60 GHz, respectively. The measured peak stopband rejections are 61.5 and 65.5 dB for the RX and TX modes, respectively. With single-tone 24 or 60 GHz input, the measured input 1-dB compression point (P 1 dB ) is 23.3 or 18.4 dBm at 24 or 60 GHz, respectively. For concurrent dual-tone 24/60-GHz input, the measured inputs P 1 dB are 19 and 16.8 dBm at 24 and 60 GHz, respectively. The measured input third-order intercept points are 31.5 and 27.9 dBm at 24 and 60 GHz, respectively.